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| SEMB3 PNP Silicon Digital Transistor Preliminary data * Switching circuit, inverter, interface circuit, driver circuit * Two ( galvanic) internal isolated Transistors with good matching in one package * Built in bias resistor (R1 = 4.7k) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07173 TR2 R1 Type SEMB3 Maximum Ratings Parameter Marking WS Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 5 15 100 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 C Junction temperature Storage temperature Thermal Resistance mA mW C Junction - soldering point 1) RthJS 300 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-26-2004 SEMB3 Electrical Characteristics at TA=25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 100 A, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 40 V, IE = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor AC Characteristics Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 3 fT 200 - Unit max. 100 630 0.3 0.8 1.1 6.2 k nA V V typ. 4.7 V(BR)CEO V(BR)CBO V(BR)EBO ICBO hFE VCEsat Vi(off) Vi(on) R1 50 50 5 120 0.4 0.5 3.2 MHz pF 1) Pulse test: t < 300s; D < 2% 2 Feb-26-2004 SEMB3 DC Current Gain hFE = f (I C) VCE = 5V (common emitter configuration) 10 3 Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20 10 2 - mA hFE 10 2 10 1 10 1 IC 10 0 10 0 -1 10 0 1 10 10 mA 10 2 10 -1 0 0.1 0.2 0.3 0.4 V 0.55 IC VCEsat Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration) 10 2 Input off voltage Vi(off) = f (IC ) VCE = 5V (common emitter configuration) 10 2 mA mA 10 1 10 1 IC IC 10 0 10 -1 -1 10 0 1 10 0 10 -1 10 -2 10 10 V 10 2 10 -3 0 1 2 3 V 5 Vi(on) Vi(off) 3 Feb-26-2004 SEMB3 Total power dissipation P tot = f (TS) 300 mW Ptot 200 150 100 50 0 0 15 30 45 60 75 90 105 120 C 150 TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 10 2 Ptotmax/ PtotDC RthJS 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Feb-26-2004 |
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